Parametric results for: TIP142F under Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

BUILT IN BIAS RESISTANCE RATIO IS 0.015 1

6 hits Apply

ISOLATED 4

6 hits Apply

Collector Current-Max (IC) (1)

10 A 6

6 hits Apply

Collector-Emitter Voltage-Max (1)

100 V 4

6 hits Apply

Configuration (3)

DARLINGTON 1 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 3 SINGLE 2

6 hits Apply

DC Current Gain-Min (hFE) (1)

500.0 6

6 hits Apply

R-PSFM-T3 4

6 hits Apply

e0 1 e3 1

6 hits Apply

Manufacturer (5)

Continental Device India Ltd 1 Fairchild Semiconductor Corporation 2 New Jersey Semiconductor Products Inc 1 Samsung Semiconductor 1 Transys Electronics Limited 1

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

3 4

6 hits Apply

150.0 °C 5

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

FLANGE MOUNT 4

6 hits Apply

Active 1 Contact Manufacturer 2 Obsolete 3

6 hits Apply

No 1

6 hits Apply

NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

NPN 6

6 hits Apply

60 W 5

6 hits Apply

Surface Mount (2)

NO 4 YES 1

6 hits Apply