Parametric results for: TK100S04N1L under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

114.0 mJ 2

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

40 V 2

4 hits Apply

Drain Current-Max (ID) (1)

100 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

4.5 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

220 pF 2

4 hits Apply

R-PSSO-G2 2

4 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 4

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

2 2

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

175.0 °C 3

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

Active 4

4 hits Apply

Yes 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

100 W 1 180 W 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply