Parametric results for: TK12J55D under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

317.0 mJ 1

3 hits Apply

DRAIN 1

3 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

550 V 1

3 hits Apply

Drain Current-Max (ID) (1)

12 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

570 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PSFM-T3 1

3 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 1

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

FLANGE MOUNT 1

3 hits Apply

Active 3

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

190 W 3

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply