Parametric results for: TK6A80ES4X under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

308.0 mJ 1

2 hits Apply

ISOLATED 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

800 V 1

2 hits Apply

Drain Current-Max (ID) (1)

6 A 1

2 hits Apply

Drain-source On Resistance-Max (1)

1.7 Ω 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

10 pF 1

2 hits Apply

TO-220AB 1

2 hits Apply

R-PSFM-T3 1

2 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 2

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Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

3 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Active 2

2 hits Apply

Yes 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

45 W 1

2 hits Apply

Surface Mount (1)

NO 1

2 hits Apply