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TN2640N3-G
Microchip Technology Inc
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$1.2201 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 220 mA | 5 Ω | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 740 mW | 740 mW | 2 A | SWITCHING | SILICON | 52 ns | 35 ns | TO-92 | O-PBCY-W3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | WIRE | BOTTOM | MICROCHIP TECHNOLOGY INC | GREEN PACKAGE-3 | compliant | EAR99 | 8541.29.00.95 | Microchip | ||||||||||
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TN2640LG-G
Microchip Technology Inc
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$1.6812 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 400 V | 1 | 260 mA | 5 Ω | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.3 W | 2 A | SWITCHING | SILICON | 52 ns | 35 ns | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | MICROCHIP TECHNOLOGY INC | SOIC-8 | compliant | EAR99 | 8541.29.00.95 | Microchip | |||||||||
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TN2640K4-G
Microchip Technology Inc
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$2.0517 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 400 V | 1 | 500 mA | 5 Ω | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | 3 A | SWITCHING | SILICON | 52 ns | 35 ns | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 3 | 150 °C | -55 °C | 260 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | MICROCHIP TECHNOLOGY INC | DPAK-3/2 | compliant | EAR99 | 8541.29.00.95 | Microchip | ||||||||
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TN2640N3P016
Supertex Inc
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 400 mA | 5 Ω | LOW THRESHOLD | 25 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN LEAD | THROUGH-HOLE | BOTTOM | SUPERTEX INC | CYLINDRICAL, O-PBCY-T3 | compliant | EAR99 | 8541.29.00.95 | |||||||||||||||
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TN2640N3P008
Supertex Inc
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 400 mA | 5 Ω | LOW THRESHOLD | 25 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN LEAD | THROUGH-HOLE | BOTTOM | SUPERTEX INC | CYLINDRICAL, O-PBCY-T3 | compliant | EAR99 | 8541.29.00.95 | |||||||||||||||
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TN2640N3-GP015
Supertex Inc
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Check for Price | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 220 mA | 5 Ω | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 740 mW | 740 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | SUPERTEX INC | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | 8541.21.00.95 | ||||||||||||||||
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TN2640LG-G
Supertex Inc
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 400 V | 1 | 260 mA | 5 Ω | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.3 W | 1.3 W | 2 A | SWITCHING | SILICON | 52 ns | 35 ns | R-PDSO-G8 | e3 | Not Qualified | 150 °C | -55 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | SUPERTEX INC | SMALL OUTLINE, R-PDSO-G8 | compliant | EAR99 | 8541.29.00.95 | SOIC | 8 | |||||||
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TN2640N3P018
Supertex Inc
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 400 mA | 5 Ω | LOW THRESHOLD | 25 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN LEAD | THROUGH-HOLE | BOTTOM | SUPERTEX INC | CYLINDRICAL, O-PBCY-T3 | compliant | EAR99 | 8541.29.00.95 | |||||||||||||||
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TN2640N3-GP003
Microchip Technology Inc
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 220 mA | 5 Ω | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 740 mW | 740 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.21.00.95 | |||||||||||||||||
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TN2640N3-GP005
Microchip Technology Inc
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 220 mA | 5 Ω | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 740 mW | 740 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.21.00.95 |