Parametric results for: TN5325N3-G under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

250 V 3

3 hits Apply

Drain Current-Max (ID) (1)

215 mA 3

3 hits Apply

Drain-source On Resistance-Max (1)

7 Ω 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

23 pF 3

3 hits Apply

TO-92 3

3 hits Apply

O-PBCY-T3 3

3 hits Apply

e3 3

3 hits Apply

Manufacturer (2)

Microchip Technology Inc 2 Supertex Inc 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

-55.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

ROUND 3

3 hits Apply

CYLINDRICAL 3

3 hits Apply

Active 2 Transferred 1

3 hits Apply

Yes 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

740 mW 2

3 hits Apply

740 mW 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply