Parametric results for: TPC8106-H under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING 1

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130.0 mJ 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

30 V 1

1 hit Apply

Drain Current-Max (ID) (1)

10 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

30 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

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R-PDSO-G8 1

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Manufacturer (1)

Toshiba America Electronic Components 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

8 1

1 hit Apply

ENHANCEMENT MODE 1

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150.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Obsolete 1

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Polarity/Channel Type (1)

P-CHANNEL 1

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2.4 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply