Parametric results for: TPN8R903NL under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

4 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 1

4 hits Apply

Drain Current-Max (ID) (2)

20 A 2 37 A 1

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (1)

8.9 mΩ 1

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

52 pF 1

4 hits Apply

S-PDSO-F8 1

4 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 4

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

8 1

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 1

4 hits Apply

SQUARE 1

4 hits Apply

SMALL OUTLINE 1

4 hits Apply

Active 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

22 W 2

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply