Parametric results for: TPV598 under RF Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

1.59 A 1

8 hits Apply

20 pF 3

8 hits Apply

Collector-Emitter Voltage-Max (2)

20 V 1 27 V 3

Min (V) - Max (V)

8 hits Apply

Configuration (2)

SINGLE 7 Single 1

8 hits Apply

DC Current Gain-Min (hFE) (1)

10.0 8

8 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 4

8 hits Apply

O-CRPM-F4 3

8 hits Apply

Manufacturer (8)

Advanced Semiconductor Inc 1 Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New Jersey Semiconductor Products Inc 1 Pacific Monolithics 1 Richardson Electronics Ltd 1 TRW Inc 1

8 hits Apply

Number of Elements (1)

1 7

8 hits Apply

Number of Terminals (1)

4 3

8 hits Apply

200.0 °C 7

8 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

8 hits Apply

ROUND 3

8 hits Apply

POST/STUD MOUNT 3

8 hits Apply

Active 2 Contact Manufacturer 2 Obsolete 4

8 hits Apply

Polarity/Channel Type (1)

NPN 8

8 hits Apply

Power Gain-Min (Gp) (1)

7.0 dB 2

8 hits Apply

Surface Mount (1)

NO 7

8 hits Apply

Transition Frequency-Nom (fT) (1)

2 GHz 8

8 hits Apply