Parametric results for: TSM231 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

ULTRA LOW RESISTANCE 1 ULTRA-LOW RESISTANCE 7

14 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 8

14 hits Apply

DS Breakdown Voltage-Min (2)

20 V 6 40 V 2

Min (V) - Max (V)

14 hits Apply

Drain Current-Max (ID) (4)

3.3 A 1 3.9 A 2 4 A 2 4.9 A 3

Min (A) - Max (A)

14 hits Apply

Drain-source On Resistance-Max (5)

30 mΩ 1 33 mΩ 3 45 mΩ 2 55 mΩ 1 70 mΩ 1

Min (Ω) - Max (Ω)

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

14 hits Apply

R-PDSO-G3 8

14 hits Apply

e3 6

14 hits Apply

Manufacturer (1)

Taiwan Semiconductor 14

14 hits Apply

1 1 3 2

14 hits Apply

Number of Elements (1)

1 8

14 hits Apply

Number of Terminals (1)

3 8

14 hits Apply

ENHANCEMENT MODE 8

14 hits Apply

PLASTIC/EPOXY 8

14 hits Apply

RECTANGULAR 8

14 hits Apply

SMALL OUTLINE 8

14 hits Apply

Not Recommended 4 Obsolete 10

14 hits Apply

260 5

14 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 6 P-CHANNEL 2

14 hits Apply

Surface Mount (1)

YES 8

14 hits Apply