Parametric results for: TSM60N900 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

81.0 mJ 3

3 hits Apply

DRAIN 2 ISOLATED 1

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

600 V 3

3 hits Apply

Drain Current-Max (ID) (1)

4.5 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

900 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-220AB 1 TO-251 1 TO-252 1

3 hits Apply

R-PSFM-T3 1 R-PSIP-T3 1 R-PSSO-G2 1

3 hits Apply

Manufacturer (1)

Taiwan Semiconductor 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (2)

2 1 3 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 1 IN-LINE 1 SMALL OUTLINE 1

3 hits Apply

Obsolete 3

3 hits Apply

260 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

Surface Mount (2)

NO 2 YES 1

3 hits Apply