Parametric results for: UPA1874BGR-9JG under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE 8

11 hits Apply

DS Breakdown Voltage-Min (1)

30 V 8

11 hits Apply

Drain Current-Max (ID) (1)

8 A 11

11 hits Apply

Drain-source On Resistance-Max (1)

19.5 mΩ 8

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

R-PDSO-G8 8

11 hits Apply

e0 5 e6 3

11 hits Apply

Manufacturer (3)

NEC Electronics America Inc 2 NEC Electronics Group 3 Renesas Electronics Corporation 6

11 hits Apply

Number of Elements (1)

2 8

11 hits Apply

Number of Terminals (1)

8 8

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 5

11 hits Apply

PLASTIC/EPOXY 8

11 hits Apply

RECTANGULAR 8

11 hits Apply

SMALL OUTLINE 8

11 hits Apply

Obsolete 8 Transferred 3

11 hits Apply

No 1 Yes 1

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

2 W 5

11 hits Apply

Surface Mount (1)

YES 11

11 hits Apply