Parametric results for: UPA810T-FB under RF Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

LOW NOISE 4

5 hits Apply

Collector Current-Max (IC) (1)

100 mA 5

5 hits Apply

1.5 pF 4

5 hits Apply

Collector-Emitter Voltage-Max (1)

12 V 4

5 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS 4

5 hits Apply

DC Current Gain-Min (hFE) (1)

70.0 2

5 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 4

5 hits Apply

R-PDSO-G6 4

5 hits Apply

e0 2 e6 2

5 hits Apply

Manufacturer (3)

NEC Compound Semiconductor Devices Ltd 2 NEC Electronics Group 2 Renesas Electronics Corporation 1

5 hits Apply

1 1

5 hits Apply

Number of Elements (1)

2 4

5 hits Apply

Number of Terminals (1)

6 4

5 hits Apply

150.0 °C 2

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

No 1 Yes 1

5 hits Apply

Polarity/Channel Type (1)

NPN 5

5 hits Apply

200 mW 1

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply

Transition Frequency-Nom (fT) (2)

3 GHz 1 4.5 GHz 4

Min (MHz) - Max (MHz)

5 hits Apply