Parametric results for: UTT200N03-15 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

864.0 mJ 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

30 V 6

6 hits Apply

Drain Current-Max (ID) (1)

200 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

2.6 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

233 pF 6

6 hits Apply

TO-220AB 2 TO-263AB 4

6 hits Apply

R-PSFM-T3 2 R-PSSO-G2 4

6 hits Apply

Manufacturer (1)

Unisonic Technologies Co Ltd 6

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (2)

2 4 3 2

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

-55.0 °C 6

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

FLANGE MOUNT 2 SMALL OUTLINE 4

6 hits Apply

Active 6

6 hits Apply

NOT SPECIFIED 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

178 W 6

6 hits Apply

Surface Mount (2)

NO 2 YES 4

6 hits Apply