Parametric results for: UZVN2106G under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 6

6 hits Apply

Drain Current-Max (ID) (1)

710 mA 6

6 hits Apply

Drain-source On Resistance-Max (1)

2 Ω 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

20 pF 3

6 hits Apply

R-PDSO-G4 6

6 hits Apply

e3 4

6 hits Apply

Manufacturer (2)

Diodes Incorporated 3 Zetex / Diodes Inc 3

6 hits Apply

1 4

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

4 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 3

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Obsolete 3 Transferred 3

6 hits Apply

260 2 NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply