Parametric results for: VLB10-12F under RF Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

EMITTER 1

1 hit Apply

Collector Current-Max (IC) (1)

2 A 1

1 hit Apply

65 pF 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

18 V 1

1 hit Apply

Configuration (1)

SINGLE 1

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DC Current Gain-Min (hFE) (1)

5.0 1

1 hit Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

1 hit Apply

O-CRFM-F4 1

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Manufacturer (1)

Advanced Semiconductor Inc 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

4 1

1 hit Apply

200.0 °C 1

1 hit Apply

CERAMIC, METAL-SEALED COFIRED 1

1 hit Apply

ROUND 1

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FLANGE MOUNT 1

1 hit Apply

Active 1

1 hit Apply

Polarity/Channel Type (1)

NPN 1

1 hit Apply

20 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply