Parametric results for: VN0106N3 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH INPUT IMPEDANCE 3

32 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 30

32 hits Apply

DS Breakdown Voltage-Min (1)

60 V 30

32 hits Apply

Drain Current-Max (ID) (2)

350 mA 13 500 mA 19

Min (A) - Max (A)

32 hits Apply

Drain-source On Resistance-Max (1)

3 Ω 30

32 hits Apply

METAL-OXIDE SEMICONDUCTOR 32

32 hits Apply

8 pF 30

32 hits Apply

TO-92 30

32 hits Apply

O-PBCY-T3 30

32 hits Apply

e0 19 e3 2

32 hits Apply

Manufacturer (4)

Microchip Technology Inc 7 Supertex Inc 23 Telcom Semiconductor Inc 1 Topaz Semiconductor 1

32 hits Apply

Number of Elements (1)

1 32

32 hits Apply

Number of Terminals (1)

3 30

32 hits Apply

ENHANCEMENT MODE 32

32 hits Apply

150.0 °C 28

32 hits Apply

-55.0 °C 10

32 hits Apply

PLASTIC/EPOXY 30

32 hits Apply

ROUND 30

32 hits Apply

CYLINDRICAL 30

32 hits Apply

Active 7 Obsolete 18 Transferred 7

32 hits Apply

Yes 2

32 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 32

32 hits Apply

1 W 19

32 hits Apply

1 W 7

32 hits Apply

Surface Mount (1)

NO 32

32 hits Apply