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1 - 10 of 12 results
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VN0606L-G
Microchip Technology Inc
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$1.0383 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 330 mA | 3 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 800 mW | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.29.00.95 | Microchip | ||
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VN0606L-GP002
Microchip Technology Inc
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 330 mA | 3 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 800 mW | 800 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.21.00.95 | ||||||
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VN0606L-GP003
Microchip Technology Inc
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 330 mA | 3 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 800 mW | 800 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.29.00.95 | ||||||
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VN0606L-GP005
Microchip Technology Inc
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Check for Price | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 330 mA | 3 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 800 mW | 800 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.21.00.95 | |||||||
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VN0606L-GP014
Microchip Technology Inc
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Check for Price | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 330 mA | 3 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 800 mW | 800 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.21.00.95 | |||||||
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VN0606L-GP013
Microchip Technology Inc
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 330 mA | 3 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 800 mW | 800 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.21.00.95 | ||||||
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VN0606L-GP013
Supertex Inc
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 330 mA | 3 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | SUPERTEX INC | unknown | EAR99 | 8541.21.00.95 | |||||||||
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VN0606L-GP003
Supertex Inc
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 330 mA | 3 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | SUPERTEX INC | unknown | EAR99 | 8541.21.00.95 | |||||||||
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VN0606L-GP002
Supertex Inc
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 330 mA | 3 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | SUPERTEX INC | unknown | EAR99 | 8541.21.00.95 | |||||||||
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VN0606L-GP014
Supertex Inc
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 330 mA | 3 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | SUPERTEX INC | unknown | EAR99 | 8541.21.00.95 |