Parametric results for: VN2222L under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

EUROPEAN PART NUMBER 3 LOW THRESHOLD 4 LOW THRESHOLD, LOGIC LEVEL COMPATIBLE 1

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Configuration (3)

SINGLE 9 Single 2 SINGLE WITH BUILT-IN DIODE 22

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DS Breakdown Voltage-Min (1)

60 V 22

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Drain Current-Max (Abs) (ID) (1)

99 mA 2

34 hits Apply

Drain Current-Max (ID) (5)

99 mA 3 150 mA 15 230 mA 9 250 mA 3 270 mA 1

Min (A) - Max (A)

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Drain-source On Resistance-Max (1)

7.5 Ω 22

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METAL-OXIDE SEMICONDUCTOR 33

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5 pF 22

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TO-226AA 9 TO-92 11

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O-PBCY-T3 15 O-PBCY-W3 7

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e0 13 e1 2

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Manufacturer (12)

Freescale Semiconductor 2 Motorola Semiconductor Products 12 onsemi 2 Sipex Corporation 2 Telcom Semiconductor Inc 2 Teledyne Technologies Inc 1 Telefunken Microelectronics Gmbh 1 Temic Semiconductors 4 Topaz Semiconductor 2 Vishay Dale 1 Vishay Intertechnologies 2 Vishay Siliconix 3

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Number of Elements (1)

1 31

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Number of Terminals (1)

3 22

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ENHANCEMENT MODE 33

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150.0 °C 29

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PLASTIC/EPOXY 22

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ROUND 22

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CYLINDRICAL 22

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Active 2 Obsolete 18 Transferred 14

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No 1 Yes 2

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260 2

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Polarity/Channel Type (1)

N-CHANNEL 33

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1 W 1

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400 mW 9 800 mW 2 1 W 4

Min (W) - Max (W)

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Surface Mount (1)

NO 33

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