Parametric results for: VP1008CSM4 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

HIGH RELIABILITY 14

14 hits Apply

DRAIN 14

14 hits Apply

Configuration (1)

SINGLE 14

14 hits Apply

DS Breakdown Voltage-Min (1)

100 V 14

14 hits Apply

Drain Current-Max (ID) (1)

300 mA 14

14 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 14

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 14

14 hits Apply

R-CDSO-N4 14

14 hits Apply

e4 6

14 hits Apply

Manufacturer (2)

TT Electronics Power and Hybrid / Semelab Limited 7 TT Electronics Resistors 7

14 hits Apply

Number of Elements (1)

1 14

14 hits Apply

Number of Terminals (1)

4 14

14 hits Apply

ENHANCEMENT MODE 14

14 hits Apply

150.0 °C 14

14 hits Apply

CERAMIC, METAL-SEALED COFIRED 14

14 hits Apply

RECTANGULAR 14

14 hits Apply

SMALL OUTLINE 14

14 hits Apply

Active 14

14 hits Apply

No 4 Yes 3

14 hits Apply

NOT SPECIFIED 8

14 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 14

14 hits Apply

Surface Mount (1)

YES 14

14 hits Apply