Parametric results for: VP1106N2 under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 6

6 hits Apply

Drain Current-Max (ID) (1)

1.5 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

2 Ω 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

35 pF 6

6 hits Apply

TO-39 6

6 hits Apply

O-MBCY-W3 6

6 hits Apply

e0 2

6 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Supertex Inc 5

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

METAL 6

6 hits Apply

ROUND 6

6 hits Apply

CYLINDRICAL 6

6 hits Apply

Active 1 Obsolete 5

6 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 6

6 hits Apply

6 W 5

6 hits Apply

6 W 2

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply