Parametric results for: VQ1000J under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING 1 FAST SWITCHING, LOGIC LEVEL COMPATIBLE 1

6 hits Apply

Configuration (1)

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 3

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 3

6 hits Apply

Drain Current-Max (ID) (2)

25 mA 1 225 mA 5

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (1)

5.5 Ω 3

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

5 pF 1

6 hits Apply

R-CDIP-T14 1 R-PDIP-T14 2

6 hits Apply

e0 5

6 hits Apply

Manufacturer (6)

Calogic Inc 1 Sipex Corporation 1 Telcom Semiconductor Inc 1 Temic Semiconductors 1 Vishay Intertechnologies 1 Vishay Siliconix 1

6 hits Apply

Number of Elements (1)

4 3

6 hits Apply

Number of Terminals (1)

14 3

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 2

6 hits Apply

-55.0 °C 1

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 1 PLASTIC/EPOXY 2

6 hits Apply

RECTANGULAR 3

6 hits Apply

IN-LINE 3

6 hits Apply

Obsolete 5 Transferred 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

2 W 5

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply