Parametric results for: VRF141 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 2

8 hits Apply

Configuration (1)

SINGLE 6

8 hits Apply

DS Breakdown Voltage-Min (1)

80 V 6

8 hits Apply

Drain Current-Max (ID) (2)

20 A 4 40 A 2

Min (A) - Max (A)

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

8 hits Apply

50 pF 3

8 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 6

8 hits Apply

O-CRFM-F4 4 R-CDFM-F4 2

8 hits Apply

e1 2

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Manufacturer (2)

Microchip Technology Inc 4 Microsemi Corporation 4

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1 2

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Number of Elements (1)

1 6

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Number of Terminals (1)

4 6

8 hits Apply

DEPLETION MODE 5 ENHANCEMENT MODE 1

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200.0 °C 6

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CERAMIC, METAL-SEALED COFIRED 6

8 hits Apply

RECTANGULAR 2 ROUND 4

8 hits Apply

FLANGE MOUNT 6

8 hits Apply

Active 4 Transferred 4

8 hits Apply

Yes 1

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NOT SPECIFIED 2

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

8 hits Apply

Power Gain-Min (Gp) (2)

12.0 dB 1 16.0 dB 2

Min (dB) - Max (dB)

8 hits Apply

Surface Mount (2)

NO 2 YES 4

8 hits Apply