Parametric results for: VRF150 under RF Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Configuration (1)

SINGLE 4

10 hits Apply

DS Breakdown Voltage-Min (2)

125 V 1 170 V 4

Min (V) - Max (V)

10 hits Apply

Drain Current-Max (ID) (1)

16 A 5

10 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

10 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 5

10 hits Apply

O-CRFM-F4 4 O-PRFM-F4 1

10 hits Apply

e1 2

10 hits Apply

Manufacturer (3)

Advanced Power Technology 1 Microchip Technology Inc 3 Microsemi Corporation 6

10 hits Apply

1 2

10 hits Apply

Number of Elements (1)

1 4

10 hits Apply

Number of Terminals (1)

4 5

10 hits Apply

ENHANCEMENT MODE 5

10 hits Apply

200.0 °C 4

10 hits Apply

CERAMIC, METAL-SEALED COFIRED 4 PLASTIC/EPOXY 1

10 hits Apply

ROUND 5

10 hits Apply

FLANGE MOUNT 5

10 hits Apply

Active 3 Transferred 7

10 hits Apply

NOT SPECIFIED 2

10 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

10 hits Apply

Surface Mount (2)

NO 1 YES 4

10 hits Apply