Parametric results for: ZXM64N02X04 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW THRESHOLD 8

12 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 12

12 hits Apply

DS Breakdown Voltage-Min (1)

20 V 12

12 hits Apply

Drain Current-Max (ID) (2)

3.9 A 4 5.4 A 8

Min (A) - Max (A)

12 hits Apply

Drain-source On Resistance-Max (2)

40 mΩ 8 50 mΩ 4

Min (Ω) - Max (Ω)

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

12 hits Apply

MO-187AA 8

12 hits Apply

R-PDSO-G8 4 S-PDSO-G8 8

12 hits Apply

e3 9

12 hits Apply

Manufacturer (2)

Diodes Incorporated 6 Zetex / Diodes Inc 6

12 hits Apply

1 9

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (1)

8 12

12 hits Apply

ENHANCEMENT MODE 12

12 hits Apply

150.0 °C 4

12 hits Apply

PLASTIC/EPOXY 12

12 hits Apply

RECTANGULAR 4 SQUARE 8

12 hits Apply

SMALL OUTLINE 12

12 hits Apply

Not Recommended 2 Obsolete 5 Transferred 5

12 hits Apply

No 1 Yes 1

12 hits Apply

260 6 NOT SPECIFIED 3

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

12 hits Apply

1.8 W 2

12 hits Apply

Surface Mount (1)

YES 12

12 hits Apply