Parametric results for: ZXMN10A11G under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 16

16 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 16

16 hits Apply

DS Breakdown Voltage-Min (1)

100 V 16

16 hits Apply

Drain Current-Max (ID) (3)

1.3 A 8 1.9 A 7 2.4 A 1

Min (A) - Max (A)

16 hits Apply

Drain-source On Resistance-Max (2)

350 mΩ 1 600 mΩ 15

Min (Ω) - Max (Ω)

16 hits Apply

METAL-OXIDE SEMICONDUCTOR 16

16 hits Apply

11 pF 1

16 hits Apply

R-PDSO-G4 16

16 hits Apply

e3 15

16 hits Apply

Manufacturer (2)

Diodes Incorporated 8 Zetex / Diodes Inc 8

16 hits Apply

1 15

16 hits Apply

Number of Elements (1)

1 16

16 hits Apply

Number of Terminals (1)

4 16

16 hits Apply

ENHANCEMENT MODE 16

16 hits Apply

150.0 °C 10

16 hits Apply

-55.0 °C 2

16 hits Apply

PLASTIC/EPOXY 16

16 hits Apply

RECTANGULAR 16

16 hits Apply

SMALL OUTLINE 16

16 hits Apply

Active 1 Obsolete 7 Transferred 8

16 hits Apply

No 1

16 hits Apply

260 15 NOT SPECIFIED 1

16 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 16

16 hits Apply

2 W 1 3.9 W 4

Min (W) - Max (W)

16 hits Apply

Surface Mount (1)

YES 16

16 hits Apply