Parametric results for: ap9930gm under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

COMPLEX 2

2 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

2 hits Apply

Drain Current-Max (ID) (1)

5.5 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

33 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-PDSO-G8 2

2 hits Apply

Manufacturer (1)

Advanced Power Electronics Corp 2

2 hits Apply

3 1

2 hits Apply

Number of Elements (1)

4 2

2 hits Apply

Number of Terminals (1)

8 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Contact Manufacturer 1 Obsolete 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL AND P-CHANNEL 2

2 hits Apply

1.38 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply