Parametric results for: application note under SRAMs

Filter Your Search

1 - 10 of 1,076 results

|
-
-
-
-
-
-
-
-
-
-
Memory IC Type: APPLICATION SPECIFIC SRAM
Select parts from the table below to compare.
Compare
Compare
IS61WV12816DBLL-10TLI-TR
Integrated Silicon Solution Inc
$0.6944 Yes Yes Active 2.0972 Mbit 16 128KX16 3 V 10 ns APPLICATION SPECIFIC SRAM COMMON 1 128000 131.072 k ASYNCHRONOUS 3-STATE PARALLEL 70 µA 2 V 65 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3 1 85 °C -40 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm INTEGRATED SILICON SOLUTION INC TSOP2, TSOP44,.46,32 compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
IS61WV25616EDBLL-10BLI-TR
Integrated Silicon Solution Inc
$1.0060 Yes Yes Active 4.1943 Mbit 16 256KX16 3 V 10 ns APPLICATION SPECIFIC SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 6 mA 2 V 35 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PBGA-B48 Not Qualified e3 1 85 °C -40 °C 48 PLASTIC/EPOXY TFBGA BGA48,6X8,30 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Matte Tin (Sn) BALL 750 µm BOTTOM 1.2 mm 8 mm 6 mm INTEGRATED SILICON SOLUTION INC TFBGA, BGA48,6X8,30 compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
IS61WV25616EDBLL-8TLI-TR
Integrated Silicon Solution Inc
$2.1692 Yes Yes Active 4.1943 Mbit 16 256KX16 3 V 8 ns APPLICATION SPECIFIC SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 6 mA 2 V 45 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3 1 85 °C -40 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm INTEGRATED SILICON SOLUTION INC TSOP2, TSOP44,.46,32 compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
IS61WV25616EDBLL-10BLI
Integrated Silicon Solution Inc
$3.3843 Yes Yes Active 16.7772 Mbit 16 1MX16 3 V 10 ns APPLICATION SPECIFIC SRAM COMMON 1 1000000 1.0486 M ASYNCHRONOUS 3-STATE PARALLEL 6 mA 2 V 35 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PBGA-B48 Not Qualified e3 1 85 °C -40 °C 48 PLASTIC/EPOXY TFBGA BGA48,6X8,30 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Matte Tin (Sn) BALL 750 µm BOTTOM 1.2 mm 8 mm 6 mm INTEGRATED SILICON SOLUTION INC TFBGA, BGA48,6X8,30 compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
IS61WV25616EDBLL-8TLI
Integrated Silicon Solution Inc
$4.0713 Yes Yes Active 4.1943 Mbit 16 256KX16 3.3 V 8 ns APPLICATION SPECIFIC SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 6 mA 2 V 45 µA 3.63 V 2.97 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3 1 85 °C -40 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm INTEGRATED SILICON SOLUTION INC TSOP2, TSOP44,.46,32 compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
IS61WV25616EDBLL-8BLI
Integrated Silicon Solution Inc
$5.1893 Yes Yes Active 4.1943 Mbit 16 256KX16 3.3 V 8 ns APPLICATION SPECIFIC SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 6 mA 2 V 45 µA 3.63 V 2.97 V CMOS INDUSTRIAL R-PBGA-B48 Not Qualified e3 1 85 °C -40 °C 48 PLASTIC/EPOXY TFBGA BGA48,6X8,30 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Matte Tin (Sn) BALL 750 µm BOTTOM 1.2 mm 8 mm 6 mm INTEGRATED SILICON SOLUTION INC TFBGA, BGA48,6X8,30 compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
70V3399S133BF
Integrated Device Technology Inc
$73.7305 No No Transferred 2.3593 Mbit 18 128KX18 3.3 V 4.2 ns 133 MHz APPLICATION SPECIFIC SRAM FLOW-THROUGH OR PIPELINED ARCHITECTURE COMMON 1 2 128000 131.072 k SYNCHRONOUS 3-STATE PARALLEL 30 mA 3.15 V 400 µA 3.45 V 3.15 V CMOS COMMERCIAL S-PBGA-B208 Not Qualified e0 3 70 °C 225 20 208 PLASTIC/EPOXY BGA BGA208,17X17,32 SQUARE GRID ARRAY YES TIN LEAD BALL 800 µm BOTTOM INTEGRATED DEVICE TECHNOLOGY INC FPBGA-208 not_compliant 3A991.B.2.A 8542.32.00.41 CABGA 208 BF208
IDT70V3389S5BFG8
Integrated Device Technology Inc
Check for Price Yes Yes Transferred 1.1796 Mbit 18 64KX18 5 ns 100 MHz APPLICATION SPECIFIC SRAM COMMON 2 64000 65.536 k SYNCHRONOUS 3-STATE PARALLEL 15 mA 3.15 V 360 µA CMOS COMMERCIAL S-PBGA-B208 Not Qualified e1 3 70 °C 260 30 208 PLASTIC/EPOXY FBGA BGA208,17X17,32 SQUARE GRID ARRAY, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM INTEGRATED DEVICE TECHNOLOGY INC 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208 compliant 3A991.B.2.A 8542.32.00.41
70V15S20J8
Integrated Device Technology Inc
Check for Price No No Obsolete 73.728 kbit 9 8KX9 3.3 V 20 ns APPLICATION SPECIFIC SRAM COMMON 1 2 8000 8.192 k ASYNCHRONOUS 3-STATE PARALLEL 5 mA 3 V 200 µA 3.6 V 3 V CMOS COMMERCIAL S-PQCC-J68 Not Qualified e0 1 70 °C 225 20 68 PLASTIC/EPOXY QCCJ LDCC68,1.0SQ SQUARE CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD INTEGRATED DEVICE TECHNOLOGY INC QCCJ, LDCC68,1.0SQ not_compliant EAR99 8542.32.00.41
MCM67P618FN6
Motorola Mobility LLC
Check for Price No No Obsolete 1.1796 Mbit 18 64KX18 5 V 6 ns APPLICATION SPECIFIC SRAM SELF-TIMED WRITE; BYTE WRITE; ASYN OR SYN MODE OF OPERATION COMMON 1 1 64000 65.536 k SYNCHRONOUS 3-STATE YES PARALLEL 360 µA 5.5 V 4.5 V BICMOS COMMERCIAL S-PQCC-J52 Not Qualified e0 70 °C 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 4.57 mm 19.1262 mm 19.1262 mm MOTOROLA INC QCCJ, LDCC52,.8SQ unknown 3A991.B.2.A 8542.32.00.41 LCC 52