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1 - 10 of 106 results
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APT1001RBVRG
Microchip Technology Inc
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$14.1739 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 kV | 1 | 11 A | 1 Ω | 1210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 44 A | SWITCHING | SILICON | TO-247 | R-PSFM-T3 | e1 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin/Silver/Copper (Sn/Ag/Cu) | THROUGH-HOLE | SINGLE | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | Microchip | |||||||||||||||
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APT1001RBVFRG
Microchip Technology Inc
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$15.4433 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 kV | 1 | 11 A | 1 Ω | AVALANCHE RATED | 1210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 44 A | SWITCHING | SILICON | TO-247AD | R-PSFM-T3 | e1 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN SILVER COPPER | THROUGH-HOLE | SINGLE | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | Microchip | TO-247AD, 3 PIN | |||||||||||
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APT1001RSVRG
Microchip Technology Inc
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$15.4826 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 1 kV | 1 | 11 A | 1 Ω | 1210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 44 A | SWITCHING | SILICON | R-PSSO-G2 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Pure Matte Tin (Sn) | GULL WING | SINGLE | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | Microchip | D3PAK-3 | ||||||||||||||||
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APT1001R6BFLLG
Microchip Technology Inc
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$27.1990 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 kV | 1 | 8 A | 1.6 Ω | 425 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 A | SWITCHING | SILICON | TO-247AD | R-PSFM-T3 | e1 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin/Silver/Copper (Sn/Ag/Cu) | THROUGH-HOLE | SINGLE | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | Microchip | TO-247, 3 PIN | ||||||||||||||
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APT1001R3HN
Microsemi Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 1 kV | 1 | 9 A | 1.3 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 W | 250 W | SILICON | TO-258AA | R-MSFM-P3 | e0 | Not Qualified | ISOLATED | METAL | RECTANGULAR | FLANGE MOUNT | TIN LEAD | PIN/PEG | SINGLE | ADVANCED POWER TECHNOLOGY INC | unknown | EAR99 | FLANGE MOUNT, R-MSFM-P3 | TO-258AA | 3 | 8541.29.00.95 | ||||||||||||||
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APT1001RBNR-BUTT
Microsemi Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 kV | 1 | 11 A | 1 Ω | 1210 mJ | 190 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 310 W | 44 A | SILICON | 245 ns | 81 ns | TO-247 | R-PSFM-T3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | ADVANCED POWER TECHNOLOGY INC | unknown | EAR99 | FLANGE MOUNT, R-PSFM-T3 | 8541.29.00.95 | ||||||||||||||
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APT1001RBNR-GULLWING
Advanced Power Technology
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 1 kV | 1 | 11 A | 1 Ω | 1210 mJ | 190 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 310 W | 44 A | SILICON | 245 ns | 81 ns | R-PSFM-G3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | GULL WING | SINGLE | ADVANCED POWER TECHNOLOGY INC | unknown | EAR99 | FLANGE MOUNT, R-PSFM-G3 | 8541.29.00.95 | |||||||||||||||
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APT1001R1DN
Microsemi Corporation
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE | 1 | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | ADVANCED POWER TECHNOLOGY INC | unknown | EAR99 | , | ||||||||||||||||||||||||||||||||||||
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APT1001R1AVR
Advanced Power Technology
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 2 | 1 kV | 1 | 9 A | 1.1 Ω | AVALANCHE RATED | 1210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 36 A | SWITCHING | SILICON | TO-204AE | O-MBFM-P2 | e0 | Not Qualified | 150 °C | DRAIN | METAL | ROUND | FLANGE MOUNT | TIN LEAD | PIN/PEG | BOTTOM | ADVANCED POWER TECHNOLOGY INC | unknown | EAR99 | FLANGE MOUNT, O-MBFM-P2 | |||||||||||||
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APT1001R6BFLL
Microsemi Corporation
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Check for Price | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 kV | 1 | 8 A | 1.6 Ω | 425 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 266 W | 32 A | SWITCHING | SILICON | TO-247AD | R-PSFM-T3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | MICROSEMI CORP | unknown | EAR99 | TO-247, 3 PIN | TO-247AD | 3 |