Parametric results for: apt1001r3bn under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 5

6 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

1 kV 5

6 hits Apply

Drain Current-Max (ID) (1)

10 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

1.3 Ω 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

160 pF 5

6 hits Apply

TO-247 2 TO-247AD 1

6 hits Apply

R-PSFM-G3 2 R-PSFM-T3 3

6 hits Apply

e0 1

6 hits Apply

Manufacturer (2)

Advanced Power Technology 3 Microsemi Corporation 3

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 5

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

FLANGE MOUNT 5

6 hits Apply

Obsolete 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

310 W 5

6 hits Apply

310 W 2

6 hits Apply

Surface Mount (2)

NO 4 YES 2

6 hits Apply