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APT10035LFLLG
Microchip Technology Inc
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$33.1656 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 kV | 1 | 28 A | 350 mΩ | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 690 W | 112 A | SWITCHING | SILICON | TO-264AA | R-PSFM-T3 | e1 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN SILVER COPPER | THROUGH-HOLE | SINGLE | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | ||||||||
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APT10035LFLL
Advanced Power Technology
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 kV | 1 | 28 A | 350 mΩ | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 690 W | 112 A | SWITCHING | SILICON | TO-264AA | R-PSFM-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN LEAD | THROUGH-HOLE | SINGLE | ADVANCED POWER TECHNOLOGY INC | unknown | EAR99 | FLANGE MOUNT, R-PSFM-T3 | |||||||
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APT10035LFLL
Microsemi Corporation
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Check for Price | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 kV | 1 | 28 A | 350 mΩ | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 690 W | 112 A | SWITCHING | SILICON | TO-264AA | R-PSFM-T3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | MICROSEMI CORP | unknown | EAR99 | TO-264, 3 PIN | TO-264AA | 3 | ||||
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APT10035LFLLG
Microsemi Corporation
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 kV | 1 | 28 A | 350 mΩ | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 690 W | 112 A | SWITCHING | SILICON | TO-264AA | R-PSFM-T3 | e1 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN SILVER COPPER | THROUGH-HOLE | SINGLE | MICROSEMI CORP | unknown | EAR99 | TO-264, 3 PIN | TO-264AA | 3 |