Parametric results for: apt13f120s under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1 HIGH RELIABILITY 1

2 hits Apply

1070.0 mJ 2

2 hits Apply

DRAIN 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

1.2 kV 2

2 hits Apply

Drain Current-Max (ID) (2)

13 A 1 14 A 1

Min (A) - Max (A)

2 hits Apply

Drain-source On Resistance-Max (2)

1.2 Ω 1 1.4 Ω 1

Min (Ω) - Max (Ω)

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

55 pF 1

2 hits Apply

R-PDSO-G2 1 R-PSSO-G2 1

2 hits Apply

e1 2

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Microsemi Corporation 1

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

-55.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

625 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply