Parametric results for: apt8018jn under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

3600.0 mJ 2

4 hits Apply

ISOLATED 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

800 V 4

4 hits Apply

Drain Current-Max (ID) (1)

40 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

180 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

690 pF 2

4 hits Apply

R-PUFM-D4 2 R-PUFM-X4 2

4 hits Apply

Manufacturer (2)

Advanced Power Technology 2 Microsemi Corporation 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

4 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Obsolete 4

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

690 W 2

4 hits Apply

690 W 4

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply