Parametric results for: asi10 under RF Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN EMITTER BALLAST RESISTOR 1 HIGH RELIABILITY 4 WITH EMITTER BALLASTING RESISTORS 1

274 hits Apply

BASE 3 EMITTER 10 SOURCE 3

274 hits Apply

Collector Current-Max (IC) (50)

28 mA 1 60 mA 2 100 mA 1 150 mA 1 200 mA 6 225 mA 1 250 mA 9 300 mA 5 400 mA 5 500 mA 6 600 mA 5 700 mA 2 750 mA 4 800 mA 2 820 mA 1 900 mA 1 1 A 16 1.1 A 1 1.2 A 1 1.25 A 1 1.5 A 4 1.59 A 2 1.7 A 1 1.75 A 1 1.8 A 2 2 A 16 2.3 A 1 2.4 A 1 2.5 A 4 2.6 A 3 2.75 A 1 3 A 4 3.25 A 2 3.5 A 2 4 A 11 4.5 A 7 5 A 12 6.5 A 3 8 A 9 9 A 8 10 A 22 11 A 2 12 A 11 16 A 6 20 A 11 21.6 A 2 25 A 4 28 A 3 40 A 3 43.2 A 2

Min (A) - Max (A)

274 hits Apply

0.6 pF 1 1.5 pF 1 2.5 pF 3 3 pF 1 3.2 pF 4 3.5 pF 9 4 pF 4 5 pF 21 5.5 pF 1 6 pF 1 6.5 pF 2 7 pF 3 7.5 pF 2 8.5 pF 2 10 pF 9 12 pF 2 15 pF 10 19 pF 2 20 pF 6 22 pF 1 25 pF 5 30 pF 3 35 pF 1 40 pF 3 45 pF 2 50 pF 12 60 pF 1 65 pF 10 75 pF 4 80 pF 13 85 pF 2 100 pF 4 110 pF 3 115 pF 1 130 pF 1 135 pF 2 140 pF 1 150 pF 4 165 pF 2 200 pF 2 220 pF 2 250 pF 3 270 pF 3 285 pF 1 300 pF 2 335 pF 1 360 pF 1 380 pF 1 390 pF 1 400 pF 2

Min (pF) - Max (pF)

274 hits Apply

Collector-Emitter Voltage-Max (17)

12 V 5 16 V 13 18 V 28 20 V 10 22 V 1 24 V 7 25 V 13 26 V 6 28 V 16 30 V 19 32 V 2 33 V 6 35 V 64 36 V 3 55 V 11 65 V 2 250 V 1

Min (V) - Max (V)

274 hits Apply

Configuration (3)

COMMON EMITTER, 2 ELEMENTS 1 SINGLE 216 SINGLE WITH BUILT-IN RESISTOR 12

274 hits Apply

DC Current Gain-Min (hFE) (3)

10.0 5 15.0 6 20.0 1

Min - Max

274 hits Apply

DS Breakdown Voltage-Min (6)

30 V 1 40 V 1 60 V 4 65 V 7 120 V 1 125 V 3

Min (V) - Max (V)

274 hits Apply

Drain Current-Max (ID) (9)

10 mA 1 1.25 A 2 2.5 A 2 5 A 1 6 A 1 7 A 1 9 A 1 16 A 5 40 A 2

Min (A) - Max (A)

274 hits Apply

JUNCTION 1 METAL-OXIDE SEMICONDUCTOR 16

274 hits Apply

5 pF 1

274 hits Apply

Highest Frequency Band (6)

C BAND 4 HIGH FREQUENCY BAND 17 L BAND 60 S BAND 18 ULTRA HIGH FREQUENCY BAND 80 VERY HIGH FREQUENCY BAND 86

274 hits Apply

TO-39 5 TO-46 1 TO-72 1

274 hits Apply

O-CRDB-F4 18 O-CRFM-F2 24 O-CRFM-F4 52 O-CRPM-F4 50 O-CXFM-F2 5 O-CXFM-F6 20 O-MBCY-W3 6 O-MBCY-W4 1 O-MRPM-F4 1 O-XRPM-F4 18 R-CDFM-F2 46 R-CDFM-F4 18 R-CDFM-F6 10 R-CDFM-F8 3 R-CRDB-F4 1 R-CXFM-F6 1

274 hits Apply

Manufacturer (1)

Advanced Semiconductor Inc 274

274 hits Apply

Number of Elements (2)

1 228 2 1

Min - Max

274 hits Apply

Number of Terminals (5)

2 75 3 6 4 159 6 31 8 3

274 hits Apply

DEPLETION MODE 1 ENHANCEMENT MODE 16

274 hits Apply

150.0 °C 3 200.0 °C 251 250.0 °C 20

Min (°C) - Max (°C)

274 hits Apply

CERAMIC, METAL-SEALED COFIRED 248 METAL 8 UNSPECIFIED 18

274 hits Apply

RECTANGULAR 79 ROUND 195

274 hits Apply

CYLINDRICAL 7 DISK BUTTON 19 FLANGE MOUNT 179 POST/STUD MOUNT 69

274 hits Apply

Active 274

274 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 17 NPN 255

274 hits Apply

6.25 W 1 7 W 1 18.75 W 1 29 W 1 35 W 1 875 W 1 1.167 kW 1

Min (W) - Max (W)

274 hits Apply

Surface Mount (2)

NO 148 YES 126

274 hits Apply

Transition Frequency-Nom (fT) (6)

200 MHz 2 250 MHz 3 600 MHz 2 750 MHz 1 2.5 GHz 2 8.5 GHz 1

Min (MHz) - Max (MHz)

274 hits Apply