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MSM514402B-60SJ
LAPIS Semiconductor Co Ltd
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Check for Price | No | Obsolete | 4.1943 Mbit | 4 | 1MX4 | 5 V | 60 ns | 1024 | STATIC COLUMN DRAM | COMMON | 1000000 | 1.0486 M | 3-STATE | 1 mA | 100 µA | CMOS | COMMERCIAL | R-PDSO-J20 | Not Qualified | e0 | 70 °C | 20 | PLASTIC/EPOXY | SOJ | SOJ20/26,.34 | RECTANGULAR | SMALL OUTLINE | YES | Tin/Lead (Sn/Pb) | J BEND | 1.27 mm | DUAL | LAPIS SEMICONDUCTOR CO LTD | SOJ, SOJ20/26,.34 | unknown | EAR99 | 8542.32.00.02 | ||||||||||||||||||||||
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HYR1612820G-745
Infineon Technologies AG
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Check for Price | Obsolete | 2.1475 Gbit | 16 | 128MX16 | 2.5 V | 2.06 ns | 711 MHz | BLOCK ORIENTED PROTOCOL | RAMBUS DRAM MODULE | SELF CONTAINED REFRESH | COMMON | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 2.63 V | 2.37 V | CMOS | R-XDMA-N184 | Not Qualified | 184 | UNSPECIFIED | DIMM | DIMM184,40 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | 1 mm | DUAL | INFINEON TECHNOLOGIES AG | DIMM, DIMM184,40 | unknown | EAR99 | 8542.32.00.36 | DMA | 184 | |||||||||||||||||||
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MT4C4258Z-8
Micron Technology Inc
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Check for Price | No | No | Obsolete | 1.0486 Mbit | 4 | 256KX4 | 5 V | 80 ns | 512 | STATIC COLUMN | STATIC COLUMN DRAM | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | COMMON | 1 | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | 1 mA | 70 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PZIP-T20 | Not Qualified | e0 | 70 °C | 20 | PLASTIC/EPOXY | ZIP | ZIP20,.1 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 1.27 mm | ZIG-ZAG | 9.35 mm | 25.295 mm | 2.795 mm | MICRON TECHNOLOGY INC | 0.350 INCH, PLASTIC, ZIP-20 | not_compliant | EAR99 | 8542.32.00.02 | ZIP | 20 | |||||||||
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RM1618A-840
LG Semicon Co Ltd
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Check for Price | Obsolete | 301.9899 Mbit | 18 | 16MX18 | 40 ns | 800 MHz | RAMBUS DRAM MODULE | COMMON | 16000000 | 16.7772 M | 3-STATE | CMOS | R-PDMA-N184 | Not Qualified | 184 | PLASTIC/EPOXY | DIMM | DIMM184,40 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | 1 mm | DUAL | LG SEMICON CO LTD | unknown | EAR99 | 8542.32.00.28 | |||||||||||||||||||||||||||||||
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K4N1G164QE-HC25T
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | STATIC COLUMN DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 10 mA | 200 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B84 | Not Qualified | e1 | 3 | 85 °C | 260 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | TFBGA, BGA84,9X15,32 | compliant | EAR99 | 8542.32.00.32 | |||||
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MT4C1026VG-7IT
Micron Technology Inc
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Check for Price | No | Obsolete | 1.0486 Mbit | 1 | 1MX1 | 5 V | 70 ns | 512 | STATIC COLUMN DRAM | SEPARATE | 1000000 | 1.0486 M | 3-STATE | 1 mA | 80 µA | CMOS | INDUSTRIAL | R-PDSO-G20 | Not Qualified | e0 | 85 °C | -40 °C | 20 | PLASTIC/EPOXY | TSOP | TSOP20(UNSPEC) | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | DUAL | MICRON TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||||||
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AM90C257-10PC
AMD
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Check for Price | No | No | Obsolete | 262.144 kbit | 1 | 256KX1 | 5 V | 100 ns | 256 | STATIC COLUMN | STATIC COLUMN DRAM | RAS ONLY REFRESH | SEPARATE | 1 | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | 4 mA | 65 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T16 | Not Qualified | e0 | 70 °C | 16 | PLASTIC/EPOXY | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 7.62 mm | ADVANCED MICRO DEVICES INC | DIP, DIP16,.3 | unknown | EAR99 | 8542.32.00.02 | DIP | 16 | ||||||||||
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M5M44412AL-6
Mitsubishi Electric
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Check for Price | No | No | Obsolete | 4.1943 Mbit | 4 | 1MX4 | 5 V | 60 ns | 1024 | STATIC COLUMN | STATIC COLUMN DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | 1 mA | 100 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PZIP-T20 | Not Qualified | e0 | 70 °C | 20 | PLASTIC/EPOXY | ZIP | ZIP20,.1 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 1.27 mm | ZIG-ZAG | 10.16 mm | 2.8 mm | MITSUBISHI ELECTRIC CORP | ZIP, ZIP20,.1 | unknown | EAR99 | 8542.32.00.02 | ZIP | 20 | ||||||||||
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MT4VR3218AG-745XX
Micron Technology Inc
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Check for Price | Obsolete | 603.9798 Mbit | 18 | 32MX18 | 2.5 V | BLOCK ORIENTED PROTOCOL | RAMBUS DRAM MODULE | SELF CONTAINED REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 2.63 V | 2.37 V | CMOS | COMMERCIAL | R-XDMA-N184 | Not Qualified | 70 °C | 184 | UNSPECIFIED | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | DUAL | MICRON TECHNOLOGY INC | , | unknown | EAR99 | 8542.32.00.32 | DMA | 184 | ||||||||||||||||||||||||
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M5M44258AJ-12
Mitsubishi Electric
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Check for Price | No | No | Obsolete | 1.0486 Mbit | 4 | 256KX4 | 5 V | 120 ns | 512 | STATIC COLUMN | STATIC COLUMN DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | 500 µA | 50 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-J20 | Not Qualified | e0 | 70 °C | 20 | PLASTIC/EPOXY | SOJ | SOJ20/26,.34 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | J BEND | 1.27 mm | DUAL | 3.55 mm | 17.5 mm | 7.62 mm | MITSUBISHI ELECTRIC CORP | SOJ, SOJ20/26,.34 | unknown | EAR99 | 8542.32.00.02 | SOJ | 20 |