Parametric results for: bf1206 under RF Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

COMPLEX 3 SINGLE 3

6 hits Apply

DS Breakdown Voltage-Min (1)

6 V 3

6 hits Apply

Drain Current-Max (ID) (1)

30 mA 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

0.03 pF 2 0.045 pF 1

Min (pF) - Max (pF)

6 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 3

6 hits Apply

R-PDSO-F6 1 R-PDSO-G6 2

6 hits Apply

e0 1 e3 4

6 hits Apply

Manufacturer (2)

NXP Semiconductors 4 Philips Semiconductors 2

6 hits Apply

Number of Elements (2)

1 3 2 3

Min - Max

6 hits Apply

Number of Terminals (1)

6 3

6 hits Apply

DEPLETION MODE 1 DUAL GATE, ENHANCEMENT MODE 5

6 hits Apply

150.0 °C 6

6 hits Apply

PLASTIC/EPOXY 3

6 hits Apply

RECTANGULAR 3

6 hits Apply

SMALL OUTLINE 3

6 hits Apply

Active 1 Obsolete 3 Transferred 2

6 hits Apply

Yes 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

180 mW 6

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply