Parametric results for: bf1212wr under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW NOISE 1

3 hits Apply

SOURCE 1

3 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

6 V 1

3 hits Apply

Drain Current-Max (ID) (1)

30 mA 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

0.03 pF 1

3 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

3 hits Apply

R-PDSO-G4 1

3 hits Apply

e3 3

3 hits Apply

Manufacturer (2)

NXP Semiconductors 2 Philips Semiconductors 1

3 hits Apply

1 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 1

3 hits Apply

DUAL GATE, ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

SMALL OUTLINE 1

3 hits Apply

Active 1 Obsolete 1 Transferred 1

3 hits Apply

260 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

180 mW 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply