Parametric results for: bf990 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SOURCE 17

27 hits Apply

Configuration (2)

SINGLE 15 SINGLE WITH BUILT-IN DIODE 12

27 hits Apply

DS Breakdown Voltage-Min (1)

18 V 20

27 hits Apply

Drain Current-Max (ID) (1)

30 mA 25

27 hits Apply

METAL-OXIDE SEMICONDUCTOR 27

27 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 12

27 hits Apply

R-PDSO-G4 20

27 hits Apply

e0 7

27 hits Apply

Manufacturer (4)

North American Philips Discrete Products Div 3 NXP Semiconductors 15 Philips Semiconductors 4 YAGEO Corporation 5

27 hits Apply

Number of Elements (1)

1 27

27 hits Apply

Number of Terminals (1)

4 20

27 hits Apply

DUAL GATE, DEPLETION MODE 20

27 hits Apply

150.0 °C 17

27 hits Apply

PLASTIC/EPOXY 20

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RECTANGULAR 20

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SMALL OUTLINE 20

27 hits Apply

Obsolete 20 Transferred 7

27 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 27

27 hits Apply

200 mW 7

27 hits Apply

Surface Mount (1)

YES 27

27 hits Apply