Parametric results for: bf998, under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

LOW NOISE 31

78 hits Apply

SOURCE 58

78 hits Apply

Configuration (2)

SINGLE 27 SINGLE WITH BUILT-IN DIODE 48

78 hits Apply

DS Breakdown Voltage-Min (1)

12 V 55

78 hits Apply

Drain Current-Max (ID) (1)

30 mA 72

78 hits Apply

METAL-OXIDE SEMICONDUCTOR 72

78 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 55

78 hits Apply

R-PDSO-G4 58

78 hits Apply

e0 8 e3 23

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Manufacturer (11)

Infineon Technologies AG 9 North American Philips Discrete Products Div 2 NXP Semiconductors 27 Philips Semiconductors 5 Rochester Electronics LLC 1 Siemens 3 Telefunken Microelectronics Gmbh 5 Temic Semiconductors 21 Vishay Intertechnologies 1 Vishay Semiconductors 1 YAGEO Corporation 3

78 hits Apply

1 8 NOT SPECIFIED 1

78 hits Apply

Number of Elements (2)

1 61 2 14

Min - Max

78 hits Apply

Number of Terminals (1)

4 58

78 hits Apply

DEPLETION MODE 3 DUAL GATE, DEPLETION MODE 69

78 hits Apply

150.0 °C 42

78 hits Apply

PLASTIC/EPOXY 58

78 hits Apply

RECTANGULAR 58

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SMALL OUTLINE 58

78 hits Apply

Active 2 Obsolete 40 Transferred 36

78 hits Apply

Yes 15

78 hits Apply

260 18 NOT SPECIFIED 3

78 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 72

78 hits Apply

200 mW 25 300 mW 2

Min (W) - Max (W)

78 hits Apply

Power Gain-Min (Gp) (2)

16.5 dB 22 20.0 dB 1

Min (dB) - Max (dB)

78 hits Apply

Surface Mount (1)

YES 75

78 hits Apply