Parametric results for: blf547 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY 1

3 hits Apply

SOURCE 1

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Configuration (2)

COMMON SOURCE, 2 ELEMENTS 1 SINGLE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

65 V 1

3 hits Apply

Drain Current-Max (ID) (1)

9 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

500 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

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21 pF 1

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Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

3 hits Apply

R-CDFM-F4 1

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Manufacturer (3)

North American Philips Discrete Products Div 1 NXP Semiconductors 1 Philips Semiconductors 1

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Number of Elements (2)

1 2 2 1

Min - Max

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Number of Terminals (1)

4 1

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ENHANCEMENT MODE 1

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200.0 °C 3

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CERAMIC, METAL-SEALED COFIRED 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Obsolete 1 Transferred 2

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Polarity/Channel Type (1)

N-CHANNEL 3

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225 W 1

3 hits Apply

Power Gain-Min (Gp) (1)

10.0 dB 1

3 hits Apply

Surface Mount (1)

YES 1

3 hits Apply