Parametric results for: blf6g13ls-250p under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 4

6 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 4

6 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

6 hits Apply

Drain Current-Max (ID) (1)

42 A 2

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

6 hits Apply

Highest Frequency Band (1)

L BAND 4

6 hits Apply

R-CDFP-F4 3 R-CDSO-G4 1

6 hits Apply

Manufacturer (2)

Ampleon 4 NXP Semiconductors 2

6 hits Apply

NOT APPLICABLE 1

6 hits Apply

Number of Elements (1)

2 4

6 hits Apply

Number of Terminals (1)

4 4

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

200.0 °C 1 225.0 °C 2

Min (°C) - Max (°C)

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

FLATPACK 3 SMALL OUTLINE 1

6 hits Apply

Not Recommended 4 Transferred 2

6 hits Apply

Yes 1

6 hits Apply

NOT SPECIFIED 4

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

6 hits Apply

Power Gain-Min (Gp) (1)

15.0 dB 2

6 hits Apply

Surface Mount (1)

YES 4

6 hits Apply