Parametric results for: blf881; under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

HIGH RELIABILITY 4

8 hits Apply

SOURCE 6

8 hits Apply

Configuration (1)

SINGLE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

104 V 6

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 6

8 hits Apply

R-CDFM-F2 3 R-CDFP-F2 3

8 hits Apply

Manufacturer (2)

Ampleon 4 NXP Semiconductors 4

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

2 6

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

200.0 °C 4

8 hits Apply

CERAMIC, METAL-SEALED COFIRED 6

8 hits Apply

RECTANGULAR 6

8 hits Apply

FLANGE MOUNT 3 FLATPACK 3

8 hits Apply

Contact Manufacturer 4 Transferred 4

8 hits Apply

NOT SPECIFIED 6

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

Surface Mount (1)

YES 6

8 hits Apply