Parametric results for: blf8g22ls under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 19

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Configuration (2)

COMMON SOURCE, 2 ELEMENTS 2 SINGLE 33

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DS Breakdown Voltage-Min (1)

65 V 19

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METAL-OXIDE SEMICONDUCTOR 37

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Highest Frequency Band (1)

S BAND 19

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R-CDFP-F2 9 R-CDFP-F6 4 R-CDSO-G6 4 R-CQFP-X6 2

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Manufacturer (2)

Ampleon 28 NXP Semiconductors 28

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1 4 NOT APPLICABLE 4

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Number of Elements (2)

1 33 2 2

Min - Max

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Number of Terminals (2)

2 9 6 10

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ENHANCEMENT MODE 37

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125.0 °C 2 225.0 °C 17

Min (°C) - Max (°C)

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CERAMIC, METAL-SEALED COFIRED 19

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RECTANGULAR 19

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FLATPACK 15 SMALL OUTLINE 4

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Active 11 Obsolete 28 Transferred 17

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260 6 NOT SPECIFIED 35

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Polarity/Channel Type (1)

N-CHANNEL 37

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Power Gain-Min (Gp) (3)

16.5 dB 1 17.3 dB 2 18.0 dB 2

Min (dB) - Max (dB)

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Surface Mount (1)

YES 27

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