Parametric results for: bll6h1214-500 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 3

3 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 3

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

3 hits Apply

Drain Current-Max (ID) (1)

45 A 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

Highest Frequency Band (1)

L BAND 3

3 hits Apply

R-CDFM-F4 3

3 hits Apply

Manufacturer (2)

Ampleon 2 NXP Semiconductors 1

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

2 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

200.0 °C 1

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Contact Manufacturer 2 Transferred 1

3 hits Apply

Yes 1

3 hits Apply

245 1 NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply