Parametric results for: bs850 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE 1

5 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 1

5 hits Apply

DS Breakdown Voltage-Min (2)

45 V 1 60 V 3

Min (V) - Max (V)

5 hits Apply

Drain Current-Max (ID) (2)

150 mA 2 250 mA 3

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-236 1

5 hits Apply

R-PDSO-G3 4

5 hits Apply

Manufacturer (3)

Diodes Incorporated 3 Lite-On Semiconductor Corporation 1 TDK Micronas GmbH 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 1

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Active 1 Obsolete 4

5 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

5 hits Apply

310 mW 1

5 hits Apply

310 mW 1

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply