Filter Your Search
1 - 4 of 4 results
|
BSC060N10NS3GATMA1
Infineon Technologies AG
|
$0.7017 | No | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 100 V | 1 | 14.9 A | 6 mΩ | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 A | SWITCHING | SILICON | R-PDSO-N8 | e3 | Not Qualified | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-F5 | 8 | not_compliant | EAR99 | Infineon | |||
|
BSC060N10NS3GATMA1/SAMPLE
Infineon Technologies AG
|
Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 1 | METAL-OXIDE SEMICONDUCTOR | SWITCHING | SILICON | R-PDSO-N8 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | TDSON-8 | compliant | |||||||||||||||||||||
|
BSC060N10NS3G
Infineon Technologies AG
|
Check for Price | Yes | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 100 V | 1 | 14.9 A | 6 mΩ | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 360 A | SWITCHING | SILICON | R-PDSO-N8 | e3 | Not Qualified | 1 | 150 °C | 260 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | TDSON-8 | 8 | not_compliant | EAR99 | Infineon | ||
|
BSC060N10NS3GXT
Infineon Technologies AG
|
Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 100 V | 1 | 14.9 A | 6 mΩ | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 A | SWITCHING | SILICON | R-PDSO-N8 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TDSON-8 | compliant | EAR99 |