Parametric results for: bsc0902ns under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

20.0 mJ 2 40.0 mJ 3

Min (mJ) - Max (mJ)

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 5

5 hits Apply

Drain Current-Max (ID) (2)

23 A 2 24 A 3

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (2)

3.5 mΩ 3 3.7 mΩ 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-F8 5

5 hits Apply

e3 4

5 hits Apply

Manufacturer (1)

Infineon Technologies AG 5

5 hits Apply

1 4

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

8 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 2

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Active 5

5 hits Apply

No 2 Yes 2

5 hits Apply

260 1 NOT SPECIFIED 4

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

48 W 2

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply