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BSC190N12NS3GATMA1
Infineon Technologies AG
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$0.8318 | No | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 120 V | 1 | 8.6 A | 19 mΩ | 60 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 176 A | SWITCHING | SILICON | R-PDSO-N8 | e3 | Not Qualified | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-F5 | 8 | not_compliant | EAR99 | Infineon | |||
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BSC190N12NS3GXT
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 120 V | 1 | 8.6 A | 19 mΩ | 60 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 176 A | SWITCHING | SILICON | R-PDSO-N8 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-F5 | compliant | EAR99 | ||||||||||
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BSC190N12NS3G
Infineon Technologies AG
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 120 V | 1 | 8.6 A | 19 mΩ | 60 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 69 W | 176 A | SWITCHING | SILICON | R-PDSO-N8 | e3 | Not Qualified | 1 | 150 °C | 260 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | TDSON-8 | 8 | not_compliant | EAR99 | Infineon |