Parametric results for: bsm120d12p2c005 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ISOLATED 1

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Configuration (1)

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

1.2 kV 1

1 hit Apply

Drain Current-Max (ID) (1)

120 A 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-XUFM-X8 1

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Manufacturer (1)

ROHM Semiconductor 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

8 1

1 hit Apply

ENHANCEMENT MODE 1

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150.0 °C 1

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UNSPECIFIED 1

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RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Active 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

780 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply