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BSS223PWH6327XTSA1
Infineon Technologies AG
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$0.0987 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 390 mA | 1.2 Ω | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 22 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDSO-G3 | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-G3 | 3 | compliant | EAR99 | Infineon | |||||||||||
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BSS225H6327FTSA1
Infineon Technologies AG
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$0.3520 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 90 mA | 45 Ω | LOGIC LEVEL COMPATIBLE | 4.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PSSO-F3 | e3 | AEC-Q101 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-F3 | 3 | compliant | EAR99 | Infineon | |||||||||
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BSS229E6296
Siemens
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 70 mA | 100 Ω | 3 pF | METAL-OXIDE SEMICONDUCTOR | DEPLETION MODE | SILICON | TO-92 | O-PBCY-W3 | Not Qualified | PLASTIC/EPOXY | ROUND | CYLINDRICAL | WIRE | BOTTOM | SIEMENS A G | CYLINDRICAL, O-PBCY-W3 | unknown | EAR99 | |||||||||||||||||||
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BSS225H6327
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 90 mA | 45 Ω | LOGIC LEVEL COMPATIBLE | 4.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PSSO-F3 | e3 | AEC-Q101 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | FLAT | SINGLE | INFINEON TECHNOLOGIES AG | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | 3 | compliant | EAR99 | ||||||||||||||
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BSS223PWL6327
Infineon Technologies AG
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Check for Price | Yes | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 390 mA | 1.2 Ω | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 22 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 mW | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | ROHS COMPLIANT, PLASTIC PACKAGE-3 | 3 | compliant | EAR99 | |||||||||||
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BSS229E-6296
Siemens
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE | 3 | 250 V | 1 | 70 mA | 100 Ω | METAL-OXIDE SEMICONDUCTOR | DEPLETION MODE | SILICON | TO-92 | O-PBCY-T3 | Not Qualified | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | SIEMENS A G | CYLINDRICAL, O-PBCY-T3 | unknown | |||||||||||||||||||||
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BSS225L6327HTSA1
Infineon Technologies AG
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 90 mA | 45 Ω | LOGIC LEVEL COMPATIBLE | 4.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PSSO-F3 | AEC-Q101 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | SINGLE | INFINEON TECHNOLOGIES AG | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | unknown | EAR99 | ||||||||||||||||||
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BSS229
Siemens
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 70 mA | 100 Ω | 3 pF | METAL-OXIDE SEMICONDUCTOR | DEPLETION MODE | 630 mW | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | THROUGH-HOLE | BOTTOM | SIEMENS A G | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | ||||||||||||||
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BSS223PW
Infineon Technologies AG
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Check for Price | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 390 mA | 1.2 Ω | AVALANCHE RATED | 22 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SOT-323, 3 PIN | 3 | compliant | EAR99 | SC-70 | SOT323 | |||||||
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BSS229
Infineon Technologies AG
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 70 mA | 100 Ω | 3 pF | METAL-OXIDE SEMICONDUCTOR | DEPLETION MODE | 630 mW | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN LEAD | THROUGH-HOLE | BOTTOM | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 |